Resist processes for ArF excimer laser lithography.
نویسندگان
چکیده
منابع مشابه
Tunable ArF excimer-laser source.
A tunable ArF* (193-nm) excimer source is described that produces over 125 mJ/pulse (peak) at 10 pulses/sec. This device has a spectral width of less than 2 cm(-1) and a demonstrated tunability of nearly 320 cm(-1) from 192.8 to 193.9 nm. Tunability, bandwidth, and mode control are achieved by injecting the fourth anti-Stokes line (in H(2)) of a frequency-doubled dye laser into an ArF* excimer-...
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Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...
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Human enamel surface was irradiated with ArF excimer laser and examined under light microscopy and scanning electron microscopy (SEM). Enamel surface was irradiated at three different areas with different energy fluences. It is demonstrated that the ArF excimer laser causes ablation of the calcified hard enamel tissue. Ablation curves were measured. There was no significant difference found in ...
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Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 1993
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.6.473